B.TECH. IN ELECTRONICS ENGINEERING (VLSI DESIGN AND TECHNOLOGY)coretheorySem 4
COMPOUND SEMICONDUCTOR ELECTRONICS
ECE 4416
Syllabus
- 01Fundamentals of Semiconductors: Crystal structures, defects, electron and phonon interactions, energy bands, metal-semiconductor contacts, carrier mobility, and concentration
- 02III-V Semiconductors: Properties of GaAs, InP, InGaAs, AlGaAs, GaN; structures, electrical characteristics, and surface states
- 03III-V Heterojunction Devices: MODFET structure, HEMT principles (AlGaAs/GaAs, AlGaN/GaN), band structures, polarization effects, small signal analysis, and applications in high-power and high-speed scenarios
- 04Optical Devices: III-V semiconductor-based optical devices, LED fundamentals, semiconductor laser theory
- 05Technology: Fabrication of HEMT structures, compound semiconductor synthesis, TLM for analysis
- 06Self-Directed Learning: Applications and characterization processes for III-V devices
References
- Keh Yung Cheng, III–V Compound Semiconductors and Devices, An Introduction to Fundamentals, Springer, 2020
- Donald A. Neamen, Semiconductor Physics and Devices Basic Principles Fourth Edition, McGraw-Hill, 2012
- Hadis Morkoç, Handbook of Nitride Semiconductors and Devices: Materials Properties, Physics and Growth, Wiley VCH Verlag GmbH & Co. KGaA, 2008
- S.M. Sze, Physics of Semiconductor Devices, 3rd ed. Wiley 2008
Credits Structure
3Lecture
0Tutorial
0Practical
3Total